Title :
Nitride-based LEDs with p-InGaN capping layer
Author :
Chang, S.J. ; Chen, C.H. ; Chang, P.C. ; Su, Y.K. ; Chen, P.C. ; Jhou, Y.D. ; Hung, H. ; Wang, S.M. ; Luang, B.R.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
Nitride-based light-emitting diodes (LEDs) with Mg-doped In0.23Ga0.77N capping layers were successfully fabricated. Compared to Mg-doped GaN layers, it was found that we could achieve a much larger hole concentration from Mg-doped In0.23Ga0.77N layers. It was also found that we could reduce the 20 mA operation voltage from 3.78 to 3.37 V by introducing a 5-nm-thick In0.23Ga0.77N layer on top of the p-GaN layer. Furthermore, it was found that output intensity of LEDs with In0.23Ga0.77N capping layer was much larger, particularly at elevated temperatures.
Keywords :
III-V semiconductors; MOCVD; contact resistance; electroluminescence; gallium compounds; hole density; hole mobility; indium compounds; light emitting diodes; magnesium; 20 mA; 3.37 V; In0.23Ga0.77N:Mg; contact resistance; electrical properties; electroluminescence intensity; hole mobilities; larger hole concentration; low-pressure metalorganic chemical vapor deposition; nitride-based LED; optical properties; p-type capping layer; reduced operation voltage; Contact resistance; Displays; Electroluminescence; Gallium nitride; Ionization; Laser sintering; Light emitting diodes; Superlattices; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.820131
