Current-mode CMOS image sensor using lateral bipolar phototransistors

Author

Huang, Ying ; Hornsey, Richard I.

Author_Institution

Rockwell Semicond., Thousand Oaks, CA, USA

Volume

50

Issue

12

fYear

2003

Firstpage

2570

Lastpage

2573

Abstract

A current-mode image sensor has been designed using current mirrors with amplifying device ratios. Prototype sensors have been fabricated in a standard 0.18-μm CMOS technology. Image capture is demonstrated from two 70 × 48 pixel arrays, using photodiodes and lateral bipolar phototransistors as the photodetectors. The latter type displays a reduced fixed pattern noise, while linearity is similar to that of the photodiode pixel. The lateral bipolar phototransistor pixels also show a greater response in the red region of the visible spectrum.

Keywords

CMOS image sensors; bipolar transistors; current mirrors; current-mode circuits; photodetectors; phototransistors; active pixel sensors; amplifying device ratios; current amplification schemes; current mirrors; current-mode CMOS image sensor; image capture; lateral bipolar phototransistors; linearity; photodetectors; red region response; reduced fixed pattern noise; spectral response comparison; CMOS image sensors; CMOS technology; Displays; Image sensors; Mirrors; Photodetectors; Photodiodes; Phototransistors; Pixel; Prototypes;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2003.820123

Filename

1255627