Spin-valve transistor formed on GaAs [001] substrate

Author

Sato, R. ; Mizushima, K.

Author_Institution

Res. & Dev. Center, Toshiba Corp., Kanagawa, Japan

Volume

38

Issue

5

fYear

2002

fDate

9/1/2002 12:00:00 AM

Firstpage

2863

Lastpage

2868

Abstract

A spin-valve transistor with an epitaxial Fe/Au/Fe [001] base was formed on nGaAs, of which the transfer ratio was 10^-3 at 3 V with more than 100% magnetocurrent ratio. Both bottom and upper Fe layers show the uniaxial anisotropy with easy magnetization axis along [110], although the contribution of cubic anisotropy with [100] easy axis cannot be neglected for the upper Fe layer. Possibility of applying spin-valve transistors to read heads in the high-density magnetic recording is discussed.

Keywords

coercive force; gold; hot carriers; hot electron transistors; iron; magnetic epitaxial layers; magnetic heads; magnetic hysteresis; magnetic multilayers; spin valves; Fe-Au-Fe; GaAs; Schottky junction; base multilayer; coercive force; cubic anisotropy; easy magnetization axis; electron transmittance; enhanced down-spin electron scattering; epitaxial base; high-density magnetic recording; hot electron transistor; ideality factor; magnetic memories; magnetocurrent ratio; phenomenological model; read heads; spin-valve transistor; transfer ratio; tunnel junction flatness; uniaxial anisotropy; voltage dependence; Anisotropic magnetoresistance; Gallium arsenide; Gold; Iron; Magnetic anisotropy; Magnetic heads; Magnetic recording; Magnetization; Perpendicular magnetic anisotropy; Substrates;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2002.803149

Filename

1042390