848106

High speed heterojunction photodiodes and beam-of-light transistors

Rediker, R.H. ; Quist, T.M. ; Lax, B.

51

1

1963

218

219

Electromagnetic wave absorption; Electron devices; Frequency response; Gallium arsenide; Heterojunctions; Infrared detectors; P-i-n diodes; P-n junctions; PIN photodiodes; Semiconductor diodes;

English

Proceedings of the IEEE

ieee

0018-9219

jour

10.1109/PROC.1963.1684

1443614