• DocumentCode
    848161
  • Title

    The Co2MnGe Heusler compound: a first principles study of the bulk phase and of the interface with GaAs

  • Author

    Picozzi, S. ; Continenza, A. ; Freeman, A.J.

  • Author_Institution
    Dipt. di Fisica, L´´Aquila Univ., Italy
  • Volume
    38
  • Issue
    5
  • fYear
    2002
  • fDate
    9/1/2002 12:00:00 AM
  • Firstpage
    2895
  • Lastpage
    2897
  • Abstract
    Within density functional theory, full-potential linearized augmented plane wave calculations have been performed to study the structural, electronic and magnetic properties of the Co2MnGe Heusler compound. As a result of the semiconducting (metallic) character found in the minority (majority) band structure, this material is predicted to be half-metallic, with an integer magnetic moment of 5 μB. This peculiar property, highly desired for spintronics applications, stimulated the study of the Co2MnGe/GaAs interface. Our calculations show that the predicted band offset is not suitable for spin-injection and that, due to interface states, the half-metallicity is lost in proximity to the junction.
  • Keywords
    APW calculations; Brillouin zones; ab initio calculations; cobalt alloys; core levels; density functional theory; electron spin polarisation; energy gap; ferromagnetic materials; germanium alloys; linear muffin-tin orbital method; manganese alloys; semimetals; Brillouin zone sampling; Co2MnGe; Co2MnGe-GaAs; Heusler compound; ab-initio calculations; bulk phase; core levels; correlation potential; density functional theory; electronic properties; exchange potential; full-potential linearized augmented plane wave calculations; half-metallic ferromagnet; integer magnetic moment; interface band offset; interface states; magnetic properties; majority spin band structure; minority band structure; muffin tin spheres; spin-injection; spin-polarized band structure; spintronics; structural properties; Density functional theory; Gallium arsenide; Inorganic materials; Interface states; Magnetic materials; Magnetic moments; Magnetic properties; Magnetoelectronics; Semiconductivity; Semiconductor materials;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2002.803142
  • Filename
    1042402