DocumentCode
84820
Title
Light Extraction Efficiency Enhancement of III-Nitride Light-Emitting Diodes by Using 2-D Close-Packed
Microsphere Arrays
Author
Xiao-Hang Li ; Peifen Zhu ; Guangyu Liu ; Jing Zhang ; Renbo Song ; Yik-Khoon Ee ; Kumnorkaew, P. ; Gilchrist, J.F. ; Tansu, N.
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Volume
9
Issue
5
fYear
2013
fDate
May-13
Firstpage
324
Lastpage
332
Abstract
The enhancement of light extraction efficiency of InGaN quantum well light emitting diodes (LEDs) was achieved by employing the refractive index matched TiO2 microsphere arrays. The optimization studies of the dipping method and rapid convective deposition (RCD) method were carried out for the deposition of TiO2 microsphere arrays onto LEDs. The two-dimensional (2D) close-packed TiO2 microsphere arrays were deposited by the using optimized conditions of the dipping and RCD methods, respectively. The light extraction efficiencies of LEDs under electrical injection were enhanced by 1.8-1.9 times by utilizing 520-nm diameter amorphous and anatase TiO2 microspheres via the two deposition methods.
Keywords
III-V semiconductors; dip coating; indium compounds; light emitting diodes; liquid phase deposition; quantum well devices; wide band gap semiconductors; 2D close packed microsphere arrays; InGaN; TiO2; amorphous microsphere; anatase microsphere; dipping method; electrical injection; light extraction efficiency enhancement; optimization study; quantum well light emitting diodes; rapid convective deposition method; size 520 nm; Gallium nitride; Lenses; Light emitting diodes; Microoptics; Power generation; Refractive index; Surface treatment; ${hbox{TiO}}_{2}$ microspheres; III-Nitride; light extraction efficiency; light-emitting diodes; refractive index matching;
fLanguage
English
Journal_Title
Display Technology, Journal of
Publisher
ieee
ISSN
1551-319X
Type
jour
DOI
10.1109/JDT.2013.2246541
Filename
6476034
Link To Document