• DocumentCode
    84820
  • Title

    Light Extraction Efficiency Enhancement of III-Nitride Light-Emitting Diodes by Using 2-D Close-Packed {\\hbox {TiO}}_{2} Microsphere Arrays

  • Author

    Xiao-Hang Li ; Peifen Zhu ; Guangyu Liu ; Jing Zhang ; Renbo Song ; Yik-Khoon Ee ; Kumnorkaew, P. ; Gilchrist, J.F. ; Tansu, N.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
  • Volume
    9
  • Issue
    5
  • fYear
    2013
  • fDate
    May-13
  • Firstpage
    324
  • Lastpage
    332
  • Abstract
    The enhancement of light extraction efficiency of InGaN quantum well light emitting diodes (LEDs) was achieved by employing the refractive index matched TiO2 microsphere arrays. The optimization studies of the dipping method and rapid convective deposition (RCD) method were carried out for the deposition of TiO2 microsphere arrays onto LEDs. The two-dimensional (2D) close-packed TiO2 microsphere arrays were deposited by the using optimized conditions of the dipping and RCD methods, respectively. The light extraction efficiencies of LEDs under electrical injection were enhanced by 1.8-1.9 times by utilizing 520-nm diameter amorphous and anatase TiO2 microspheres via the two deposition methods.
  • Keywords
    III-V semiconductors; dip coating; indium compounds; light emitting diodes; liquid phase deposition; quantum well devices; wide band gap semiconductors; 2D close packed microsphere arrays; InGaN; TiO2; amorphous microsphere; anatase microsphere; dipping method; electrical injection; light extraction efficiency enhancement; optimization study; quantum well light emitting diodes; rapid convective deposition method; size 520 nm; Gallium nitride; Lenses; Light emitting diodes; Microoptics; Power generation; Refractive index; Surface treatment; ${hbox{TiO}}_{2}$ microspheres; III-Nitride; light extraction efficiency; light-emitting diodes; refractive index matching;
  • fLanguage
    English
  • Journal_Title
    Display Technology, Journal of
  • Publisher
    ieee
  • ISSN
    1551-319X
  • Type

    jour

  • DOI
    10.1109/JDT.2013.2246541
  • Filename
    6476034