Title :
Multichannel Semiconductor Detectors for X-Ray Transmission Computed Tomography
Author :
Naruse, Y. ; Sugita, T. ; Kobayashi, T. ; Jimbo, M. ; Fujii, M. ; Yoshida, Y. ; Suzuki, T.
Author_Institution :
Sensor Group, Electron Devices Laboratory, Toshiba R&D Center, Toshiba Corporation, 1, Komukai Toshibacho, Saiwai-ku, Kawasaki-city, Kanagawa, 210, Japan
Abstract :
Multichannel semiconductor detectors for X-ray transmission computed tomography (XCT) have been developed using surface-barrier diodes fabricated from high-purity n-type silicon. X-rays are detected directly by the semiconductor detectors in the operational mode, non-biasing in conjunction with current to voltage converters (I/V converters). In addition to the image reconstruction test, the fundamental properties of the detector have been studied theoretically as well as experimentally.
Keywords :
Computed tomography; Image reconstruction; Semiconductor diodes; Silicon; Surface reconstruction; Testing; Voltage; X-ray detection; X-ray detectors; X-ray imaging;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1980.4330835
