Comparison of experimental target currents with analytical model results for plasma immersion ion implantation

Author

En, William G. ; Lieberman, Michael A. ; Cheung, Nathan W.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

23

Issue

3

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

415

Lastpage

421

Abstract

An analytical model of the voltage and current characteristics of a remote plasma is presented. The model simulates, the ion, electron and secondary electron currents induced before, during and after a high voltage negative pulse is applied to a target immersed in a plasma. The model also includes analytical relations that describe the sheath expansion and collapse due to negative high voltage pulses. The sheath collapse is found to be important for high repetition rate pulses. Good correlation is shown between the model and experiment for a wide variety of voltage pulses and plasma conditions

Keywords

ion implantation; plasma applications; plasma sheaths; SPICE; current; electron current; high repetition rate pulses; high voltage negative pulse; ion current; plasma immersion ion implantation; remote plasma; secondary electron current; sheath collapse; sheath expansion; target currents; voltage; Analytical models; Electrons; Plasma accelerators; Plasma immersion ion implantation; Plasma materials processing; Plasma sheaths; Plasma simulation; Plasma waves; Semiconductor device modeling; Voltage;

fLanguage

English

Journal_Title

Plasma Science, IEEE Transactions on

Publisher

ieee

ISSN

0093-3813

Type

jour

DOI

10.1109/27.402334

Filename

402334