Title :
Opposite-polarity voltage generator by hole impact ionization in a silicon bipolar transistor
Author :
Yun, Bob H. ; Cook, Robert K.
Author_Institution :
IBM Corp., Hopewell Junction, NY, USA
Abstract :
A single n-p-n transistor was used to generate a negative voltage at the collector terminal when a positive voltage was applied to the emitter relative to its grounded base. It is believed that this effect was a result of hole impact ionization at field E approximately=0 at the band-edge energy maximum in the base-collector junction, and some of the electrons so created diffused and drifted to the collector, thus accounting for the otherwise unexpected negative collector potential. Possible applications of this effect are given.<>
Keywords :
bipolar transistors; elemental semiconductors; impact ionisation; silicon; Si; band-edge energy maximum; base currents; base-collector junction; collector currents; electron diffusion; hole impact ionization; n-p-n transistor; negative collector potential; opposite polarity voltage generator; polysilicon emitter transistor; Bipolar transistors; Boron; Charge carrier processes; Current measurement; Electron emission; Impact ionization; Silicon; Thermionic emission; Tunneling; Voltage;
Journal_Title :
Electron Device Letters, IEEE
