Title :
Breakdown voltage improvement in strained InGaAlAs/GaAs FETs
Author :
Eisenbeiser, K.W. ; East, Jack R. ; Singh, Jasprit ; Li, W. ; Haddad, G.I.
Author_Institution :
Center for High Frequency Microelectron., Michigan Univ., Ann Arbor, MI, USA
Abstract :
GaAs MESFETs with a surface layer of pseudomorphic InGaAlAs have been fabricated. The compressive strain and wide bandgap in the InGaAlAs layer reduce the impact ionization rate in this layer and improve the breakdown voltage of the device. A 1 mu m*75 mu m gate device with the pseudomorphic surface layer showed an improvement in gate-to-drain breakdown of over 55% and an improvement in channel breakdown of 50% as compared to a similar device without the pseudomorphic layer. Both devices had a peak transconductance of about 190 mS/mm and a saturation current of about 265 mA/mm.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; electric breakdown of solids; gallium arsenide; impact ionisation; indium compounds; semiconductor device testing; 190 mS; 265 mA; InGaAlAs-GaAs; MESFETs; breakdown voltage; channel breakdown; compressive strain; gate-to-drain breakdown; impact ionization rate; peak transconductance; pseudomorphic surface layer; saturation current; wide bandgap; Capacitive sensors; Conducting materials; Electrons; Gallium arsenide; Impact ionization; Lifting equipment; MESFETs; Microwave FETs; Photonic band gap; Substrates;
Journal_Title :
Electron Device Letters, IEEE
