Title :
Thermoelectric infrared sensors by CMOS technology
Author :
Lenggenhager, René ; Baltes, Henry ; Peer, Jon ; Forster, Martin
Author_Institution :
Phys. Electron. Lab., Inst. of Quantum Electron., Zurich, Switzerland
Abstract :
The authors report two integrated thermoelectric infrared sensors on thin silicon oxide/nitride microstructures realized by industrial CMOS IC technology, followed by one compatible single maskless anisotropic etching step. No additional material is needed to enhance infrared absorption since the passivation layer, as provided by the CMOS process, is sufficient for certain spectral bands. The responsivities are between 12 and 28 V/W.<>
Keywords :
CMOS integrated circuits; etching; infrared detectors; integrated circuit technology; passivation; thermopiles; CMOS technology; SiO/sub 2/-Si/sub 3/N/sub 4/ microstructures; maskless anisotropic etching; passivation layer; responsivities; thermoelectric infrared sensors; Anisotropic magnetoresistance; CMOS integrated circuits; CMOS technology; Electromagnetic wave absorption; Etching; Infrared sensors; Infrared spectra; Microstructure; Silicon; Thermoelectricity;
Journal_Title :
Electron Device Letters, IEEE
