High-performance metal/silicide antifuse (for CMOS technology)

Author

Wang, Shoue-Jen ; Misium, George R. ; Camp, J.C. ; Chen, Kueing-L ; Tigelaar, Howard L.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

Volume

13

Issue

9

fYear

1992

Firstpage

471

Lastpage

472

Abstract

A low-programmed-resistance low-thermal-budget, high-performance metal/silicide antifuse is reported. The programmed ON-State resistance of the metal/silicide antifuse is around 60 Omega , which is a factor of 10 less than that of Si-based antifuses (poly/n/sup +/ and poly/poly). Metal/silicide antifuses also eliminate the nonlinear ON-state resistance seen in Si-based antifuses. Programming of the antifuse can be done in 2 ms at 14 V, which is comparable to Si-based antifuses. Both ON- and OFF-state reliability of the metal/silicide antifuse are shown to be satisfactory.<>

Keywords

CMOS integrated circuits; aluminium; integrated circuit technology; metallisation; reliability; titanium alloys; titanium compounds; tungsten alloys; 60 ohm; Al-TiW-TiSi/sub 2/; CMOS technology; OFF-state reliability; ON state reliability; TDDB; low-programmed-resistance; low-thermal-budget; metal/silicide antifuse; programmable interconnects; programmed ON-State resistance; CMOS technology; Dielectrics; Electrodes; Field programmable gate arrays; Flexible printed circuits; Fuses; Integrated circuit interconnections; Process design; Silicides; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192798

Filename

192798