Title :
Template-based MOSFET device model
Author :
Graham, Mark G. ; Paulos, John J. ; Nychka, Douglas W.
fDate :
8/1/1995 12:00:00 AM
Abstract :
This paper describes a novel method of representing the three-dimensional MOSFET current table. The method utilizes a template constructed from a drain sweep curve. This template is compressed/expanded and scaled to match all other possible drain sweep curves. This modeling technique provides more than a 10x reduction in storage space requirements, relative to a true three-dimensional table, with little loss in accuracy. It will also be shown that the method can be extended to model the intrinsic charge surfaces
Keywords :
MOSFET; carrier mobility; semiconductor device models; MOSFET device; accuracy; current table; drain sweep curve; intrinsic charge surfaces; modeling technique; storage space requirements; template-based model; Analytical models; Closed-form solution; Couplings; Current measurement; Degradation; Equations; Geometry; Interpolation; MOSFET circuits; Solid modeling;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
