DocumentCode :
848728
Title :
Influence of magnetization processes and device geometry on the GMI effect
Author :
Barandiarán, J.M. ; García-Arribas, A. ; Muñoz, J.L. ; Kurlyandskaya, G.V.
Author_Institution :
Dept. de Electr. y Electron., Pais Vasco Univ., Bilbao, Spain
Volume :
38
Issue :
5
fYear :
2002
fDate :
9/1/2002 12:00:00 AM
Firstpage :
3051
Lastpage :
3056
Abstract :
In this paper, we review the influence of different geometries (wires, ribbons, films), structures (either homostructures or sandwiches and plated wires), and materials (either amorphous or crystalline) on the giant magnetoimpedance (GMI) effect. The different magnetization processes lead to different limits of this effect. Both analytical and finite-element methods of computation have been used for simulations. Wall movement typically results in larger permeability values and, thus, in better GMI ratios. However, the damping of the walls rapidly reduces the effective permeability. The dynamic equations,for magnetization rotation lead to an expression similar to that of Snoek´s limit in ferrites, with a permeability drop at high frequency. In conductive/magnetic heterostructures, the resistivity ratio of the two materials is a dominant parameter, and a better performance is found. The model results are also compared with the actual measurements on different materials and geometries and overall agreement is found.
Keywords :
finite element analysis; giant magnetoresistance; interface magnetism; magnetic domain walls; magnetic permeability; magnetic susceptibility; magnetic thin films; magnetisation; GMI effect; Snoek limit; amorphous materials; analytical computation; conductive/magnetic heterostructures; crystalline materials; device geometry; films; finite-element methods; giant magnetoimpedance effect; homostructures; magnetic susceptibility; magnetization processes; magnetization rotation dynamic equations; permeability drop; permeability values; plated wires; resistivity ratio; ribbons; sandwiches; wall movement; wires; Amorphous magnetic materials; Amorphous materials; Conducting materials; Crystalline materials; Crystallization; Geometry; Magnetic materials; Magnetization processes; Permeability; Wires;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2002.802436
Filename :
1042451
Link To Document :
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