Nine-state resonant tunneling diode memory

Author

Seabaugh, Alan C. ; Kao, Yung-Chung ; Yuan, Han-tzong

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

Volume

13

Issue

9

fYear

1992

Firstpage

479

Lastpage

481

Abstract

The authors demonstrate an epitaxial series combination of eight pseudomorphic AlAs/In/sub 0.53/Ga/sub 0.47/As/InAs resonant tunneling diodes (RTDs) grown by molecular beam epitaxy on InP. This series RTD produces an eight-peak multiple negative differential resistance characteristic with a peak-to-valley current ratio (PVR) exceeding 2 per peak at a peak current density of approximately 6 kA/cm/sup 2/. Hysteresis in the current-voltage characteristic is reduced by uniformly Si doping the double-barrier resonant tunneling region at a density of 5*10/sup 16/ cm/sup -3/. Using this multiple-peak RTD in series with a field-effect transistor load, a nine-state multivalued memory circuit is demonstrated.<>

Keywords

III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; indium compounds; integrated memory circuits; negative resistance; resonant tunnelling devices; tunnel diodes; AlAs-In/sub 0.53/Ga/sub 0.47/As-InAs; I-V characteristic hysteresis reduction; InP substrate; double-barrier resonant tunneling region; eight-peak multiple negative differential resistance characteristic; epitaxial series combination; field-effect transistor load; molecular beam epitaxy; nine-state multivalued memory circuit; peak-to-valley current ratio; pseudo-morphic RTD; resonant tunneling diodes; Circuits; Current density; Current-voltage characteristics; Diodes; Doping; FETs; Hysteresis; Indium phosphide; Molecular beam epitaxial growth; Resonant tunneling devices;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192801

Filename

192801