A novel double-metal structure for voltage-programmable links

Author

Cohen, Simon S. ; Raffel, J.I. ; Wyatt, P.W.

Author_Institution

MIT Lincoln Lab., Lexington, MA, USA

Volume

13

Issue

9

fYear

1992

Firstpage

488

Lastpage

490

Abstract

A novel metal-insulator-metal (MIM) structure has been developed for use in field-programmable gate arrays (FPGAs) as a voltage-programmable link (VPL). The present structure relies on a combination of a refractory metal and aluminum as the lower electrode, and aluminum alone as the top electrode. The insulator, prepared by means of plasma-enhanced chemical vapor deposition, comprises a sandwich of nearly stoichiometric silicon dioxide interposed between two layers of silicon-rich silicon nitride. This MIM structure has displayed characteristics desirable for use in the emerging FPGA technology.<>

Keywords

aluminium; integrated circuit technology; logic arrays; metal-insulator-metal structures; metallisation; silicon compounds; FPGA technology; MIM structure; Mo-Al-SiO/sub 2/-SiN-SiO/sub 2/-Al; double-metal structure; field-programmable gate arrays; metal-insulator-metal; plasma-enhanced chemical vapor deposition; voltage-programmable links; Aluminum; Chemical vapor deposition; Electrodes; Field programmable gate arrays; Insulation; Metal-insulator structures; Plasma chemistry; Plasma displays; Plasma properties; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192804

Filename

192804