Title :
Near-ideal I-V characteristics of GaInP/GaAs heterojunction bipolar transistors
Author :
Liu, William ; Fan, Shou-Kong
Author_Institution :
Texas Instruments Inc., Dallas, TX, USA
Abstract :
GaInP/GaAs heterojunction bipolar transistors (HBTs) have been fabricated and these devices exhibit near-ideal I-V characteristics with very small magnitudes of the base-emitter junction space-charge recombination current. Measured current gains in both 6- mu m*6- mu m and 100- mu m*100- mu m devices remain constant for five decades of collector current and are greater than unity at ultrasmall current densities on the order of 1*10/sup -6/ A/cm/sup 2/. For the 6- mu m*6- mu m device, the current gain reaches a high value of 190 at higher current levels. These device characteristics are also compared to published data of an abrupt AlGaAs/GaAs HBT having a base layer with similar doping level and thickness.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; 100 micron; 6 micron; GaInP-GaAs; HBT; base layer thickness; base-emitter junction; collector current; current gains; device characteristics; doping level; heterojunction bipolar transistors; near-ideal I-V characteristics; semiconductors; space-charge recombination current; ultrasmall current densities; Area measurement; Breakdown voltage; Current density; Current measurement; Density measurement; Doping; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Microwave devices;
Journal_Title :
Electron Device Letters, IEEE
