The FMR behavior of an ultrathin single Fe layer on a GaAs substrate

Author

Yu, C.C. ; Liou, Y. ; Tsai, C.S. ; Chen, M.J. ; Chiu, B.S. ; Hung, D.S. ; Chang, J.F. ; Le, S.F. ; Yao, Y.D.

Author_Institution

Inst. of Phys., Acad. Sinica, Taipei, Taiwan

Volume

38

Issue

5

fYear

2002

Firstpage

3117

Lastpage

3119

Abstract

Single-layer Fe films 800 Å thick, with and without a 10-Å-thick Ag buffer layer, were prepared at various growtht emperature,T_g, on GaAs(001) substrates by molecular-beam epitaxy. For T_g around 200 °C, high-quality single crystal films were obtained without the Ag buffer layer. For T_g ⩽100 °C, a defect structure was observed in the iron layer. However, the addition of an ultrathin Ag buffer layer between GaAs and Fe has the desirable effects of eliminating the defect structure and significantly enhancing the FMR absorption.

Keywords

Kerr magneto-optical effect; atomic force microscopy; electron beam deposition; ferromagnetic materials; ferromagnetic resonance; iron; magnetic anisotropy; magnetic epitaxial layers; molecular beam epitaxial growth; reflection high energy electron diffraction; 200 C; 800 A; Fe; GaAs; RHEED; atomic force microscopy; electron-beam evaporation; ferromagnetic resonance absorption; high-quality single crystal films; in-plane fourfold magnetic anisotropy; longitudinal magneto-optical Kerr effect; magnetic microwave devices; molecular-beam epitaxy; surface defects; tunable microwave band-stop filter; ultrathin buffer layer; ultrathin single layer films; Gallium arsenide; Iron; Magnetic films; Magnetic resonance; Magnetic separation; Microwave devices; Molecular beam epitaxial growth; Optical films; Substrates; Temperature;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2002.802486

Filename

1042469