Hot-carrier-induced degradation of gate dielectrics grown in nitrous oxide under accelerated aging

Gate oxides grown with partial and complete oxidation in N/sub 2/O were studied in terms of hot-carrier stressing. The DC lifetime for 10% degradation in g/sub m/ had a 15*improvement over control oxides not grown in a N/sub 2/O atmosphere. Further improvement in g/sub m/ degradation was observed in oxides that received partial oxidation as compared with control oxides. This improvement is due to the incorporation of nitrogen that reduces strained Si-O bonds at the Si/SiO/sub 2/ interface, leading to lower interface state generation (ISG). Improvements were also observed in I/sub g/-V/sub g/ characteristics, indicating a reduction of trap sites both at the Si/SiO/sub 2/ interface and in the bulk oxide. Improved gate-induced drain leakage (GIDL) characteristics as a function of hot-carrier stressing for partial N/sub 2/O oxides were observed over control oxides. However, severe drain leakage that masked GIDL was observed on pure N/sub 2/O oxides and is a subject for further study.<>