Series resistance effects in thin oxide capacitor evaluation

The effects of undesired series resistance in thin oxide capacitors are studied. Thin dielectric reliability is usually evaluated by means of accelerated tests (ramped or constant voltage or current stress). It is shown that the breakdown electric field can be highly overestimated due to the series resistance associated with the test structure: the larger the resistance, the bigger the error. Moreover, breakdown detection criteria in automatic test routines become more critical. It is also demonstrated that a nonuniform stress is applied to the dielectric whenever the series resistance is position-dependent, as it usually is. Erroneous breakdown-related defect distributions could be inferred as a consequence of neglecting the series resistance effect. It is therefore suggested that workers pay much attention to the test structure layout definition in order to minimize these problems.<>