Title :
Substrate crosstalk reduction using low-resistivity
Author :
Wane, S. ; Bajon, D. ; Baudrand, H. ; Gamand, P.
Author_Institution :
ENSEEIHT, Toulouse, France
Abstract :
A full-wave analysis extending the transverse resonance
Keywords :
BiCMOS integrated circuits; buried layers; crosstalk; dielectric losses; integrated circuit noise; isolation technology; semiconductor epitaxial layers; spectral-domain analysis; BiCMOS structures; buried epitaxial layers; conductor losses; dielectric losses; full-wave analysis; inhomogeneous stacks; isolation performances; line spacing; low-resistivity localised diffusions; noise coupling effects; spectral domain; substrate crosstalk reduction; substrate thickness; transverse resonance technique;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20031171
