Title :
Electrical activity of Yb in InP
Author :
Lambert, B. ; Toudic, Y. ; Grandpierre, G. ; Rupert, A. ; Le Corre, A.
Author_Institution :
CNET/Lab/OCM/MPA, Lannion
fDate :
11/10/1988 12:00:00 AM
Abstract :
The authors have performed EPR measurements in synthesised InP:Yb characterised by Hall effect, SSMS and SIMS analysis and by PL experiments. In the n-type samples they observed resonance due to the Yb3+ ground state, they deduce that the acceptor Yb 2+ level is not in the InP bandgap
Keywords :
Hall effect; III-V semiconductors; impurity electron states; indium compounds; paramagnetic resonance of rare earth ions and impurities; ytterbium; EPR; Hall effect; InP:Yb; SIMS; SSMS; acceptor level; ground state; photoluminescence; spark source mass spectrometry;
Journal_Title :
Electronics Letters
