Title :
Continuous-wave GaInAsSb/AlGaAsSb type-I double quantum
Author :
Grau, M. ; Lin, C. ; Dier, O. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
Abstract :
GaInAsSb/AlGaAsSb type-I lasers with a long emission
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; quantum well lasers; 2.96 micron; 55 C; GaInAsSb-AlGaAsSb; characteristic temperature; continuous-wave mode; double quantum well lasers; extrapolated threshold current density; highly strained active region; lattice-matched claddings; long emission wavelength; pulsed mode; room-temperature lasers; type-I lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20031216
