DocumentCode :
849024
Title :
Frequency-dependent complex permeability in Zr-substituted permalloy thin films
Author :
Youssef, J.B. ; Jacquart, P.M. ; Vukadinovic, N. ; Le Gall, H.
Author_Institution :
Lab. de Magnetisme de Bretagne, CNRS, Brest, France
Volume :
38
Issue :
5
fYear :
2002
fDate :
9/1/2002 12:00:00 AM
Firstpage :
3141
Lastpage :
3143
Abstract :
In this work, we investigate Zr substitution in Permalloy Ni80Fe20 thin films in order to control the magnetic properties and then to tune the resonance frequency at lower values with high permeability levels. The structural transition from a crystalline to an amorphous phase, saturation induction, in-plane anisotropy, electrical resistivity, and frequency-dependent permeability are studied for the Zr content ranging from 0 to 17% at. The high-frequency permeability of these (Ni80Fe20)1-xZrx films is first measured in the 0.1-3-GHz range using a permeameter. Assuming a gyroresonance mechanism, the frequency-dependence of the permeability is studied as a function of the magnetization, anisotropy field, and damping parameter deduced from ferromagnetic resonance characterizations. For a Zr concentration of 17%, a resistivity of 260 μΩ·cm is obtained as well as very soft properties (Hc<0.5 Oe). We also show that the permeability is drastically affected by the Zr substitution with a significant shift of the resonance frequency from 600 to 300 MHz, which correlates with the decrease of the saturation induction and a very low anisotropy.
Keywords :
Permalloy; alloying additions; coercive force; ferromagnetic materials; ferromagnetic resonance; gyromagnetic effect; magnetic anisotropy; magnetic permeability; magnetic thin films; zirconium alloys; 0.1 to 3 GHz; Landau-Lifschitz-Gilbert equation; Ni-Fe-Zr; Ni80Fe20; Permalloy thin films; Zr substitution; anisotropy field; coercive field; damping parameter; electrical resistivity; ferromagnetic resonance; frequency-dependent complex permeability; gyromagnetic resonance; gyroresonance mechanism; high permeability levels; in-plane anisotropy; magnetic properties; resonance frequency tuning; saturation induction; structural transition; Anisotropic magnetoresistance; Crystallization; Iron; Magnetic films; Magnetic properties; Magnetic resonance; Permeability; Resonant frequency; Transistors; Zirconium;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2002.802422
Filename :
1042477
Link To Document :
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