Author :
Brien, D.O. ; Hegarty, S.P. ; Huyet, G. ; McInerney, J.G. ; Kettler, T. ; Laemmlin, M. ; Bimberg, D. ; Ustinov, V.M. ; Zhukov, A.E. ; Mikhrin, S.S. ; Kovsh, A.R.
Author_Institution :
Phys. Dept., Nat. Univ. of Ireland, Cork, Ireland
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser feedback; laser noise; laser stability; quantum dot lasers; 1.3 micron; InAs-GaAs; coherence collapse threshold; external optical feedback; feedback sensitivity; high relaxation oscillation damping; linear gain approximation; quantum dot lasers; relative intensity noise;
