Title :
An analytical model for self-limiting behavior of hot-carrier degradation in 0.25 mu m n-MOSFET´s
Author :
Liang, Chunlin ; Gaw, Henry ; Cheng, Peng
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
Hot-carrier degradation of short-channel n-MOSFETs becomes saturated after reaching a certain threshold value. The physical mechanism for this self-limiting behavior is investigated. It is proposed that the hot-carrier-induced oxide trapped charge and interface states form a potential barrier that repels subsequent hot carriers from causing further damage and can lead to the saturation of device degradation. A physical model is developed on the basis of the analysis. The model is verified by experimental results and can be used for more accurate device reliability projection.<>
Keywords :
hot carriers; insulated gate field effect transistors; interface electron states; reliability; semiconductor device models; 0.25 micron; analytical model; hot-carrier degradation; interface states; oxide trapped charge; physical mechanism; potential barrier; reliability; saturation; self-limiting behavior; short channel n-MOSFET; threshold value; Analytical models; Degradation; Energy barrier; Equations; Hot carriers; Interface states; Lead compounds; MOS devices; MOSFET circuits; Stress;
Journal_Title :
Electron Device Letters, IEEE
