An analytical model for self-limiting behavior of hot-carrier degradation in 0.25 mu m n-MOSFET´s

Author

Liang, Chunlin ; Gaw, Henry ; Cheng, Peng

Author_Institution

Intel Corp., Santa Clara, CA, USA

Volume

13

Issue

11

fYear

1992

Firstpage

569

Lastpage

571

Abstract

Hot-carrier degradation of short-channel n-MOSFETs becomes saturated after reaching a certain threshold value. The physical mechanism for this self-limiting behavior is investigated. It is proposed that the hot-carrier-induced oxide trapped charge and interface states form a potential barrier that repels subsequent hot carriers from causing further damage and can lead to the saturation of device degradation. A physical model is developed on the basis of the analysis. The model is verified by experimental results and can be used for more accurate device reliability projection.<>

Keywords

hot carriers; insulated gate field effect transistors; interface electron states; reliability; semiconductor device models; 0.25 micron; analytical model; hot-carrier degradation; interface states; oxide trapped charge; physical mechanism; potential barrier; reliability; saturation; self-limiting behavior; short channel n-MOSFET; threshold value; Analytical models; Degradation; Energy barrier; Equations; Hot carriers; Interface states; Lead compounds; MOS devices; MOSFET circuits; Stress;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192843

Filename

192843