• DocumentCode
    849074
  • Title

    Tunable InGaAsP/InP DFB lasers at 1.3 μm integrated

  • Author

    Sin, Yongkun ; Presser, N.

  • Author_Institution
    Electron. & Photonics Lab., Aerosp. Corp., El Segundo, CA, USA
  • Volume
    39
  • Issue
    25
  • fYear
    2003
  • Firstpage
    1823
  • Lastpage
    1825
  • Abstract
    Data is presented on tunable singlemode operation from 1.3
  • Keywords
    III-V semiconductors; distributed feedback lasers; focused ion beam technology; gallium arsenide; indium compounds; integrated optics; ion beam assisted deposition; laser tuning; platinum; quantum well lasers; thin film devices; 1.3 micron; 13 mA; InGaAsP-InP; coated planar buried heterostructure; distributed feedback lasers; emission spectra; focused ion beam deposited heater; integrated thin film heaters; multiple quantum well active layer; small heater current; three-step metal organic chemical vapour deposition; tunable singlemode operation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20031186
  • Filename
    1255736