Title :
High-efficiency Ku-band HBT MMIC power amplifier
Author :
Bartusiak, Paul J. ; Henderson, Tim ; Kim, Tae ; Bayraktaroglu, Burhan
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
A Ku-band monolithic HBT power amplifier was developed using a metal-organic chemical vapor deposition (MOCVD)-grown AlGaAs/GaAs heterojunction bipolar transistor (HBT) operating in common-emitter mode. At a 7.5 V collector bias, the amplifier produced 0.5 W CW output power with 5.0 dB gain and 42% power-added efficiency in the 15-16 GHz band. When operated at a single frequency (15 GHz), 0.66 W CW output power and 5.2 dB of gain were achieved with 43% PAE.<>
Keywords :
MMIC; bipolar integrated circuits; microwave amplifiers; power amplifiers; 0.5 W; 0.66 W; 15 to 16 GHz; 42 percent; 43 percent; 5 dB; 5.2 dB; AlGaAs-GaAs; CW output power; Ku-band HBT MMIC power amplifier; MOCVD; common-emitter mode; heterojunction bipolar transistor; power-added efficiency; Fabrication; Frequency; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; MESFETs; MMICs; MOCVD; Power amplifiers; Power generation;
Journal_Title :
Electron Device Letters, IEEE
