• DocumentCode
    849184
  • Title

    The photoinduced metallo-organic decomposition process: a novel technique for dielectric thin-film growth

  • Author

    Huang, Charles H J ; Rabson, Thomas A.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Rice Univ., Houston, TX, USA
  • Volume
    13
  • Issue
    12
  • fYear
    1992
  • Firstpage
    609
  • Lastpage
    611
  • Abstract
    A novel photoinduced metallo-organic decomposition (PIMOD) process has been developed for growing high-quality lithium niobate films on silicon or sapphire substrates. Crack- and interdiffusion-free films have been grown by the PIMOD process at a lower temperature for a shorter processing time than those required for the conventional MOD process. The electrical, optical, and electrooptical properties of the PIMOD-derived films are reported.<>
  • Keywords
    dielectric thin films; electro-optical effects; lithium compounds; optical waveguides; permittivity; vapour phase epitaxial growth; Al/sub 2/O/sub 3/; C-V characteristics; I-V characteristics; LiNbO/sub 3/ films; PIMOD process; Si substrate; crackfree films; dielectric constant; dielectric thin-film growth; electrooptical properties; epitaxial film; interdiffusion-free films; optical waveguide; photoinduced metallo-organic decomposition; sapphire substrates; Annealing; Dielectric thin films; Furnaces; Ion beams; Lithium niobate; Molecular beam epitaxial growth; Optical films; Semiconductor films; Substrates; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.192860
  • Filename
    192860