DocumentCode
849206
Title
Lateral junction-isolated emitter switched thyristor
Author
Baliga, B. Jayant ; Huang, Yih-Shyan
Author_Institution
Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
Volume
13
Issue
12
fYear
1992
Firstpage
615
Lastpage
617
Abstract
The operation of a 600-V junction-isolated lateral emitter switched thyristor (JI-LEST) is demonstrated. These devices exhibit an on-state voltage drop of 2.6 V at a current density of 100 A/cm/sup 2/, a turn-off time of 20 mu s, and a maximum controllable current density of about 200 A/cm/sup 2/.<>
Keywords
current density; metal-insulator-semiconductor devices; thyristors; 20 mus; 600 V; MOS gated turn off; MOS gated turn on; current density; junction-isolated lateral emitter switched thyristor; maximum controllable current density; on-state voltage drop; turn-off time; Anodes; Cathodes; Current density; Insulated gate bipolar transistors; Integrated circuit technology; MOSFET circuits; Power semiconductor switches; Substrates; Thyristors; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.192862
Filename
192862
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