Self-aligned shallow junction MJFET (metal junction FET) for higher turn-on and breakdown voltages

Author

Jeon, Byeong Tae ; Han, J.H. ; Lee, K. ; Kwon, Y.S.

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea

Volume

13

Issue

12

fYear

1992

Firstpage

630

Lastpage

632

Abstract

Simple self-aligned p/sup ++/-gate formation technology for a junction field-effect transistor (JFET) using elemental shallow Zn diffusion from patterned Au/Zn gate metal is reported. This diffusion technology makes it possible to control a very shallow p/sup ++/-layer less than 50 nm. The metal junction FET (MJFET) shows about 0.3 V higher gate turn-on voltage in forward bias and much larger reverse breakdown voltage than the conventional Al-gate MESFET with similar transconductances, typically 200 mS/mm for 1.5- mu m gate length quasi-enhancement, and 90 mS/mm for 4- mu m gate length deep depletion devices.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; diffusion in solids; gallium arsenide; junction gate field effect transistors; semiconductor technology; 1.5 micron; 200 mS; 4 micron; 90 mS; Au-Zn-GaAs; GaAs:Zn; JFET; MJFET; deep depletion devices; diffusion technology; gate length; gate turn-on voltage; metal junction FET; quasi enhancement mode FET; reverse breakdown voltage; self-aligned p/sup ++/-gate formation technology; transconductances; Breakdown voltage; FETs; Fabrication; Gallium alloys; Gallium arsenide; Gold; MESFETs; Microwave technology; Very large scale integration; Zinc;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192867

Filename

192867