Title :
Demonstration of first 10 kV, 130 mΩ cm2
Author :
Alexandrov, P. ; Zhang, J. ; Li, X. ; Zhao, J.H.
Author_Institution :
United Silicon Carbide Inc., New Brunswick, NJ, USA
Abstract :
The first demonstration of a trenched-and-implanted
Keywords :
field effect transistor switches; ion implantation; isolation technology; junction gate field effect transistors; power field effect transistors; power semiconductor switches; semiconductor doping; silicon compounds; wide band gap semiconductors; 10 kV; ICP etching; SiC; current spreading effect; deep-trenched structures; doped drift layer; high blocking voltage; high power switching; normally-off field-effect transistor; self-alignment processes; surface passivation; trenched-and-implanted field-effect transistor; vertical junction field-effect transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20031214
