Title :
Shallow ohmic contacts to p-type InAs
Author :
Lysczek, E.M. ; Mohney, S.E. ; Wittberg, T.N.
Author_Institution :
Dept. of Mater. Sci., Pennsylvania State Univ., University
Abstract :
A new Pd/Pt/Au ohmic contact to p-InAs provides a lower
Keywords :
Auger electron spectra; III-V semiconductors; contact resistance; electron beam deposition; gold; heterojunction bipolar transistors; indium compounds; narrow band gap semiconductors; ohmic contacts; palladium; platinum; rapid thermal annealing; semiconductor device metallisation; sputter deposition; AES depth profiles; DC magnetron sputtering; HBT; InAs; Pd-Pt-Au; annealing conditions; electron beam evaporation; epitaxial layers; metal deposition method; metallisation; narrow bandgap semiconductor; rapid thermal annealing; shallow ohmic contacts; specific contact resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20031154
