• DocumentCode
    849677
  • Title

    Isothermal current instability and local breakdown in GaAs FET

  • Author

    Sinkevitch, V.F. ; Vashchenko, V.A.

  • Volume
    28
  • Issue
    13
  • fYear
    1992
  • fDate
    6/18/1992 12:00:00 AM
  • Firstpage
    1265
  • Lastpage
    1267
  • Abstract
    Results of experimental observations of the S-shaped I-V characteristic and current avalanche injection isothermal filaments in GaAs FETs is presented. Apparatus and methodical provision for the nondestructive control of the isothermal current instability and irreversible breakdown of the FET are proposed.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; electric breakdown of solids; gallium arsenide; GaAs; I-V characteristic; S-shaped characteristics; current avalanche injection; irreversible breakdown; isothermal current filaments; isothermal current instability; observations; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920801
  • Filename
    144376
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=849677