Temperature-Dependence of Ge on Si p–i–n Photodetectors

Author

Colace, Lorenzo ; Balbi, Michele ; Sorianello, Vito ; Assanto, Gaetano

Author_Institution

Dept. of Electron. Eng., Univ. Roma Tre, Rome

Volume

26

Issue

14

fYear

2008

fDate

7/15/2008 12:00:00 AM

Firstpage

2211

Lastpage

2214

Abstract

We investigate the temperature dependence of germanium on silicon p-i-n photodetectors in terms of both dark current density and near-infrared responsivity. The dark current increases by nearly a factor 1.6 every 10degC, consistently with carrier generation in the space charge region. The responsivity has a complex trend, its temperature variation depending on wavelength and on the germanium quality. Detectors with a large defect density in the active layer exhibit a reduced responsivity as the temperature increases.

Keywords

Ge-Si alloys; dark conductivity; infrared detectors; integrated optoelectronics; optical fabrication; optical receivers; p-i-n photodiodes; photodetectors; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; space charge; thermo-optical effects; Si-Ge; carrier generation; dark current density; defect density; germanium on silicon p-i-n photodetectors; germanium quality; germanium radiation detectors; near-infrared responsivity; optoelectronic devices; photodiodes; silicon optoelectronics; space charge region; temperature-dependency; Bandwidth; Dark current; Detectors; Germanium; Photodetectors; Photodiodes; Silicon; Space charge; Temperature dependence; Temperature sensors; Germanium radiation detectors; imaging; near infrared; optoelectronic devices; photodiodes; silicon optoelectronics;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2008.917080

Filename

4609981