Title :
A 252-
, 16.7-Million-Frames-Per-Second 312-kpixel Back-Side-Illuminated Ultrahigh-Speed Charge-Coupled Device
Author :
Arai, Tamio ; Jun Yonai ; Hayashida, T. ; Ohtake, H. ; van Kuijk, Harry ; Etoh, Takeharu G.
Author_Institution :
NHK Sci. & Technol. Res. Labs., Tokyo, Japan
Abstract :
We developed a 312-kpixel back-side-illuminated ultrahigh-speed charge-coupled device (CCD) that has a sensitivity of 252 V/lux · s and is capable of operating at 16.7 Mfps. The potential profile of the pixel was designed by using a 3-D semiconductor device simulator. The high sensitivity results from the unit having fill factor and time aperture ratios of 100% and a high optical utilization ratio. Its sensitivity is 12.7 times that of a front-side-illuminated image sensor. Ultrahigh-speed shooting was enabled by an in situ storage image sensor. By reducing the wiring resistance and dividing the image area into eight blocks, a maximum frame rate of 16.7 Mfps was attained. The total pixel count is 760 horizontally and 411 vertically. The burst capturing speed is thus 5.2 Tpixel/s, making it the fastest imaging device to date.
Keywords :
CCD image sensors; 3D semiconductor device simulator; CCD; back-side-illuminated ultrahigh-speed charge-coupled device; fill factor; front-side-illuminated image sensor; high optical utilization ratio; storage image sensor; time aperture ratios; ultrahigh-speed shooting; wiring resistance reduction; Apertures; Charge coupled devices; Electric potential; Epitaxial layers; Logic gates; Optical attenuators; Sensitivity; Back-side-illuminated (BSI); high-sensitivity; image sensor; ultrahigh-speed charge-coupled device (CCD);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2013.2276005