Title :
Characterization of Functional Layers of CdTe Crystals Subjected to Different Surface Treatments
Author :
Gnatyuk, Dmytro V. ; Poperenko, Leonid V. ; Yurgelevych, Iryna V. ; Dacenko, Oleksandr I. ; Aoki, Toru
Author_Institution :
Fac. of Phys., Taras Shevchenko Nat. Univ. of Kyiv, Kiev, Ukraine
Abstract :
The surface functional layers of commercial detector-grade CdTe crystals are characterized after different surface treatments such as chemical polishing etching in bromine-containing solutions and laser annealing with nanosecond pulses of the second harmonic of a YAG:Nd laser. The effects of etching and laser irradiation with energy density near the melting threshold of CdTe on the optical properties of the CdTe crystal surface are studied using ellipsometry and photoluminescence (PL). The samples after storage in air are also investigated. The intrinsic emission band at 1.58 eV and broad dopant band peaked at 1.45 eV are observed in the PL spectra excited by a semiconductor laser with wavelength of 405 nm at 80 K. The low energy band is associated with carrier recombination at structural defects in the surface layer. The redistribution of the PL band intensities after chemical polishing is found and it is attributed to transformation of the point defect structure and defect formation in the surface region of CdTe. The laser treatment essentially changes the surface state and structure of the surface layer that can be used for effective modification of characteristics of the functional layers of CdTe crystals particularly band bending before formation of electrical contacts.
Keywords :
II-VI semiconductors; etching; laser beam annealing; photoluminescence; polishing; semiconductor counters; surface recombination; surface states; wide band gap semiconductors; CdTe; PL band intensities; PL spectra; YAG:Nd laser second harmonic; broad dopant band; bromine-containing solutions; carrier recombination; chemical polishing; chemical polishing etching; commercial detector-grade CdTe crystal structure; defect formation; electrical contacts; ellipsometry; energy density; intrinsic emission band; laser annealing; laser irradiation; laser treatment; low energy band; melting threshold; nanosecond pulses; optical properties; photoluminescence; point defect structure transformation; semiconductor laser; structural defects; surface functional layers; surface region; surface state; surface treatments; Chemical lasers; Crystals; Measurement by laser beam; Optical surface waves; Radiation effects; Surface emitting lasers; Surface treatment; Chemical processes; ellipsometry; photoluminescence; semiconductor detectors; thin films;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2015.2394329