DocumentCode :
850318
Title :
On the measurement of minority carrier lifetime in p-n junctions
Author :
Lee, S.C. ; Melehy, M.A.
Volume :
51
Issue :
3
fYear :
1963
fDate :
3/1/1963 12:00:00 AM
Firstpage :
501
Lastpage :
502
Keywords :
Capacitors; Charge carrier lifetime; Circuits; Crystals; Density measurement; Germanium; P-n junctions; Semiconductor diodes; Spontaneous emission; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1963.1892
Filename :
1443822
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=850318
