Lasing emission of InGaAs quantum dot microdisk diodes

Author

Lidong Zhang ; Hu, E.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA

Volume

16

Issue

1

fYear

2004

Firstpage

6

Lastpage

8

Abstract

An improved three-arm airbridge contacted microdisk diode structure is presented. Continuous-wave lasing from InGaAs quantum dot (QD) in a /spl sim/4-μm-diameter microdisks is reported with the threshold current /spl sim/40 μA at T=5 K. With the increase of injection current, the QD´s emission blueshifts due to the band-filling effect, while the laser mode peak redshifts by thermal effect. When the QD´s gain spectra shift out of alignment with the lasing mode, the next available whispering gallery mode starts lasing from QD wetting layer. The thermal heating effect is discussed by investigating the modes redshift with respect to injection current.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser modes; microdisc lasers; quantum dot lasers; red shift; spectral line shift; 4 micron; 40 muA; 5 K; InGaAs; InGaAs quantum dot microdisk diode lasers; QD wetting layer; band-tilling effect; blueshifts; continuous-wave lasing; gain spectra shift; injection current; laser mode peak redshift; lasing mode; thermal effect; thermal heating effect; three-arm airbridge; threshold current; whispering gallery mode; Indium gallium arsenide; Laser modes; Molecular beam epitaxial growth; Optical resonators; Quantum dot lasers; Quantum dots; Semiconductor diodes; Semiconductor lasers; Threshold current; US Department of Transportation;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2003.818920

Filename

1255933