Title :
Lasing emission of InGaAs quantum dot microdisk diodes
Author :
Lidong Zhang ; Hu, E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
Abstract :
An improved three-arm airbridge contacted microdisk diode structure is presented. Continuous-wave lasing from InGaAs quantum dot (QD) in a /spl sim/4-μm-diameter microdisks is reported with the threshold current /spl sim/40 μA at T=5 K. With the increase of injection current, the QD´s emission blueshifts due to the band-filling effect, while the laser mode peak redshifts by thermal effect. When the QD´s gain spectra shift out of alignment with the lasing mode, the next available whispering gallery mode starts lasing from QD wetting layer. The thermal heating effect is discussed by investigating the modes redshift with respect to injection current.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; microdisc lasers; quantum dot lasers; red shift; spectral line shift; 4 micron; 40 muA; 5 K; InGaAs; InGaAs quantum dot microdisk diode lasers; QD wetting layer; band-tilling effect; blueshifts; continuous-wave lasing; gain spectra shift; injection current; laser mode peak redshift; lasing mode; thermal effect; thermal heating effect; three-arm airbridge; threshold current; whispering gallery mode; Indium gallium arsenide; Laser modes; Molecular beam epitaxial growth; Optical resonators; Quantum dot lasers; Quantum dots; Semiconductor diodes; Semiconductor lasers; Threshold current; US Department of Transportation;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2003.818920
