Quantum-well design for monolithic optical devices with gain and saturable absorber sections

Author

Nikolaev, Valentin V. ; Avrutin, Eugene A.

Author_Institution

Dept. of Electron., Univ. of York, UK

Volume

16

Issue

1

fYear

2004

Firstpage

24

Lastpage

26

Abstract

We propose a new design of semiconductor quantum-well heterostructures, which can be used to improve the performance of monolithic mode-locked diode lasers and all-optical signal-processing devices with gain and saturable absorber sections. Numerical modeling shows that this design can increase the carrier sweep-out rate from the absorber section by several orders of magnitude, while retaining high carrier confinement on the ground level making for efficient signal amplification by the gain sections.

Keywords

laser mode locking; laser theory; optical saturable absorption; optical transmitters; quantum well lasers; semiconductor device models; absorber section; all-optical signal-processing devices; carrier sweep-out rate; gain sections; ground level; high carrier confinement; laser gain section; monolithic mode-locked diode lasers; monolithic optical devices; numerical modeling; quantum-well design; saturable absorber sections; semiconductor quantum-well heterostructures; signal amplification; Carrier confinement; Optical design; Optical devices; Optical pulse generation; Optical sensors; Optical signal processing; Performance gain; Quantum well devices; Quantum well lasers; Signal design;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2003.819399

Filename

1255939