Title :
High reliability of AlGaInP light-emitting diodes with tensile strain barrier-reducing Layer
Author :
Su, Juh-Yuh ; Chen, Wen-Bin ; Wu, Meng-Chi ; Su, Yan-Kun ; Liang, Kung-Ming
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Taiwan, Taiwan
Abstract :
A high-reliability multiple quantum-well AlGaInP light-emitting diode is grown by inserting a novel tensile strain barrier-reducing (TSBR) structure between the window and cladding layers. The TSBR (∼150 Å of Ga0.65In0.35P) film is of lattice size with valence band energy and is located between window and cladding layers, thus, significantly reducing band offset and device forward bias, and accordingly achieves improvement in dynamic resistance and junction heating. Reducing junction heating significantly enhances device reliability and lifetime. The TSBR layer also acts as a buffer layer, reducing band, and junction discontinuity between the misfit layers, an effect that can be attributed to reduced nonradiative recombination and defect density. Accordingly, TSBR is a successful design for improving global life behavior.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; quantum well devices; semiconductor device reliability; valence bands; AlGaInP; Ga0.65In0.35P; cladding layers; defect density; device forward bias; device reliability; dynamic resistance; global life behavior; high reliability of AlGaInP light-emitting diodes; high-reliability multiple quantum-well light-emitting diode; junction discontinuity; junction heating; lattice size; lifetime; misfit layers; nonradiative recombination; tensile strain barrier-reducing layer; tensile strain barrier-reducing structure; valence band energy; Buffer layers; Epitaxial growth; Lattices; Light emitting diodes; Quantum well devices; Radiative recombination; Research and development; Resistance heating; Substrates; Tensile strain;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2003.818926
