Title :
Light emission near 1.3 μm using ITO-Al2O3-Si/sub 0.3/Ge/sub 0.7/-Si tunnel diodes
Author :
Lin, Colin Yu ; Chin, A. ; Hou, Y.T. ; Li, M.F. ; McAlister, S.P. ; Kwong, D.L.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Taiwan, Taiwan
Abstract :
We have fabricated Sn : In2O3 (ITO)-Al2O3 dielectric on Si/sub 1-x/Ge/sub x/-Si metal-oxide-semiconductor tunnel diodes which emit light at around 1.3 μm, for x=0.7. The emitted photon energy is smaller than the bandgap energy of Si, thus, avoiding strong light absorption by the Si substrate. The optical device structure is compatible with that of a metal-oxide-semiconductor field-effect transistor, since a conventional doped poly-Si gate electrode will be transparent to the emitted light. Increasing the Ge composition from 0.3 to 0.4 only slightly decreases the light-emitting efficiency.
Keywords :
Ge-Si alloys; alumina; electroluminescence; indium compounds; light emitting diodes; rapid thermal annealing; silicon; solid phase epitaxial growth; tin compounds; tunnel diodes; 1.3 micron; ITO-Al/sub 2/O/sub 3/-Si/sub 0.3/Ge/sub 0.7/-Si; InSnO-Al2O3-Si0.3Ge0.7-Si; bandgap energy; electroluminescence; high epitaxy temperature; high-k gate dielectric; light-emitting device; light-emitting efficiency; metal-oxide-semiconductor tunnel diodes; rapid thermal annealing; solid phase-epitaxy; Absorption; Dielectric substrates; Germanium silicon alloys; Light emitting diodes; Molecular beam epitaxial growth; Optical interconnections; Photonic band gap; Silicon germanium; Tin; Very large scale integration;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2003.818922
