DocumentCode :
850791
Title :
A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures
Author :
McLean, F.B.
Author_Institution :
U. S. Army Electronics Research and Development Command Harry Diamond Laboratories Adelphi, Maryland 20783 Tel: (202)394-3070
Volume :
27
Issue :
6
fYear :
1980
Firstpage :
1651
Lastpage :
1657
Abstract :
An empirical model of radiation-induced interface states at the SiO2/Si interface in SiO2 MOS capacitors is developed. The formulation explicitly addresses the time-dependent two stage nature of the buildup process, and it gives the mathematical dependencies of the experimentally observed buildup on time, field, temperature, and dose. The model is applied to both wet and dry grown oxides. The implications of the empirical model for microscopic mechanisms involved in the buildup are discussed. In particular, it is argued that the experimental observations can best be understood in terms of a positive ion (probably H+) release in the SiO2 bulk and the subsequent transport of the liberated ions to the SiO2/Si interface (for positive gate bias). The induced interface states result from an interaction of the ions at the interface.
Keywords :
Character generation; History; Interface states; Ionizing radiation; Laboratories; MOS capacitors; MOS devices; Microscopy; Research and development; Temperature dependence;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1980.4331084
Filename :
4331084
Link To Document :
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