Title :
Very low threshold 780 nm AlGaAs SDH lasers on p-type GaAs substrate fabricated using single-step MOCVD
Author :
Narui, H. ; Doi, M. ; Matsuda, Osnmu ; Mori, Yojiro
Author_Institution :
Sony Corp. Res. Center, Yokohama, Japan
fDate :
6/18/1992 12:00:00 AM
Abstract :
A separated-double-heterostructure (SDH) laser on a p-type substrate with a pnp current blocking layer was fabricated using single-step MOCVD. A threshold current of 4.5 mA was obtained at room temperature under CW operation, and the linearity of the light output power/current curve was improved in comparison with that of an SDH laser on an n-type GaAs substrate.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; vapour phase epitaxial growth; 4.5 mA; 780 nm; AlGaAs; CW operation; GaAs substrate; MOVPE; SDH lasers; light/current curve; linearity; low threshold lasers; p-type substrate; pnp current blocking layer; room temperature; semiconductors; separated-double-heterostructure; single-step MOCVD; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920812
