Title :
Approaches to Radiation-Hardened I2L Technology
Author :
Bahraman, A. ; Chang, S.Y.
Author_Institution :
Northrop Corporation Northrop Research and Technology Center One Research Park Palos Verdes Peninsula, CA 90274
Abstract :
Design techniques are described for achieving radiation-hardened Schottky-base I2L (SBI2L) circuits. Radiation performance data are presented for this new technology and compared with results for conventional I2L. A design technique is also described for optimizing the intrinsic base sheet resistance in conventional or Schottky-base I2L. This concept is extended to VLSI designs. Finally, as an application of SBI2L, a new design is presented for a radiation-hardened static random-access-memory (RAM) cell.
Keywords :
Design optimization; Epitaxial layers; Equivalent circuits; Fabrication; Inverters; Isolation technology; Large scale integration; Radiation hardening; Switches; Very large scale integration;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1980.4331092
