DocumentCode :
850868
Title :
A Radiation-Hard Silicon Gate Bulk CMOS Cell Family
Author :
Gibbon, Charles F. ; Habing, Donald H. ; Flores, Richard S.
Author_Institution :
Sandia National Laboratories Division 2142 Albuquerque, New Mexico 87185
Volume :
27
Issue :
6
fYear :
1980
Firstpage :
1712
Lastpage :
1715
Abstract :
A radiation-hardened silicon gate CMOS two-port standard cell family utilizing a linear array layout topology with six to seven micron design rules and guardbanded n-channel devices has been developed. The process, structure, performance, and applications of this Expanded Linear Array (ELA) technology are described.
Keywords :
Aluminum; CMOS technology; Etching; Implants; Integrated circuit interconnections; Laboratories; Routing; Silicon; Standards development; Threshold voltage;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1980.4331093
Filename :
4331093
Link To Document :
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