• DocumentCode
    850919
  • Title

    Modeling of intracavity-pumped quasi-three-level lasers

  • Author

    Schellhorn, Martin ; Hirth, Antoine

  • Author_Institution
    ISL, French-German Res. Inst., Saint-Louis, France
  • Volume
    38
  • Issue
    11
  • fYear
    2002
  • fDate
    11/1/2002 12:00:00 AM
  • Firstpage
    1455
  • Lastpage
    1464
  • Abstract
    A model for numerical simulations of intracavity-pumped quasi-three-level lasers has been developed. The model considers upconversion losses and ground-state depletion, as well as the spatial distribution of the diode pump beam. It has been applied to a Ho:YAG laser intracavity pumped by a Tm:YLF laser. A wavelength shift of the Tm:YLF pump laser, as well as dual wavelength operation, will be discussed. The laser system has been optimized with respect to the reflectivity of the output mirror and the crystal length or dopant concentration of the Ho:YAG crystal. The lasing performance of the intracavity system will be compared to an optimized Tm:YLF-Ho:YAG laser system with separated cavities. We found that the ratio of the spot sizes in the YLF and YAG crystal has strong influence on the performance of the intracavity configuration. Simulations of a Ho:YAG laser intracavity pumped by a diode-pumped Tm: YAG laser show good agreement with experimental results taken from the literature.
  • Keywords
    holmium; laser cavity resonators; laser mirrors; laser theory; optical pumping; optimisation; reflectivity; solid lasers; Ho:YAG laser; LiYF4:Tm; Tm:YLF laser; YAG:Ho; YAl5O12:Ho; YLF:Tm; crystal length; diode pump beam; dual wavelength operation; ground-state depletion; intracavity configuration; intracavity pumped; intracavity-pumped quasi-three-level laser modelling; numerical simulations; output mirror; pump laser; reflectivity; spatial distribution; spot sizes; upconversion losses; wavelength shift; Crystalline materials; Diodes; Equations; Laser excitation; Laser modes; Laser transitions; Optical materials; Oscillators; Pump lasers; Stimulated emission;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2002.804296
  • Filename
    1043342