DocumentCode :
85098
Title :
Investigation of Intermodulation Distortion of Envelope Tracking Power Amplifier for Linearity Improvement
Author :
Kyunghoon Moon ; Yunsung Cho ; Jooseung Kim ; Sangsu Jin ; Byungjoon Park ; Dongsu Kim ; Bumman Kim
Author_Institution :
Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol, Pohang, South Korea
Volume :
63
Issue :
4
fYear :
2015
fDate :
Apr-15
Firstpage :
1324
Lastpage :
1333
Abstract :
An intermodulation distortion of an envelope tracking (ET) power amplifier (PA) is investigated in this paper. For this purpose, the distortion characteristics are simulated based on the inter-connection model between the PA and supply modulator. For the sweet spot tracking ET operation, the fifth-order distortion is the most important one, which is generated by AM-PM nonlinearity. To reduce the distortion, the phase compensation network (PCN) is proposed. The efficiency of the PA is also improved by a properly designed bias circuit. For demonstration purposes, the PA and supply modulator are implemented using an InGaP/GaAs heterojunction bipolar transistor and a 0.18- μm CMOS process, respectively. The ET PA is tested at 1.85 GHz using a long-term-evolution signal with 10-MHz bandwidth, a 7.5-dB peak-to-average power ratio, and 16 quadrature amplitude modulation. The ET PA with the proposed PCN and the bias circuit delivers a power-added efficiency of 44.3%, a gain of 23.4 dB, an evolved universal terrestrial radio access adjacent channel leakage ratio of -38.4 dBc, and an error vector magnitude of 1.8% at an average output power of 27 dBm. The multiband characteristics of the proposed ET PA are measured across 1.7-2.0 GHz. These results are achieved without any digitally supported techniques, indicating that the design approach is a promising technique for handset ET PA applications.
Keywords :
CMOS integrated circuits; III-V semiconductors; UHF integrated circuits; UHF power amplifiers; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; intermodulation distortion; quadrature amplitude modulation; wide band gap semiconductors; AM-PM nonlinearity; CMOS; InGaP-GaAs; bandwidth 10 MHz; bias circuit; distortion characteristics; envelope tracking power amplifier; error vector magnitude; evolved universal terrestrial radio access adjacent channel leakage ratio; fifth-order distortion; frequency 1.7 Hz to 2.0 GHz; heterojunction bipolar transistor; inter-connection model; intermodulation distortion; linearity improvement; long-term-evolution signal; multiband characteristics; peak-to-average power ratio; phase compensation network; power-added efficiency; quadrature amplitude mod- ulation; size 0.18 mum; supply modulator; Intermodulation distortion; Linearity; Modulation; Moon; Peak to average power ratio; Power generation; Varactors; Adjacent channel leakage ratio (ACLR); bias circuits; efficiency; envelope tracking (ET); intermodulation distortion (IMD); linearity; long-term evolution (LTE); phase compensation network (PCN); power amplifier (PA);
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2015.2405541
Filename :
7052423
Link To Document :
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