1.55-μm Range InAs–InP (100) Quantum-Dot Fabry–Pérot and Ring Lasers Using Narrow Deeply Etched Ridge Waveguides

Author

Barbarin, Y. ; Anantathanasarn, S. ; Bente, E.A.J.M. ; Oei, Y.S. ; Smit, M.K. ; Nötzel, R.

Author_Institution

Eindhoven Univ. of Technol.

Volume

18

Issue

24

fYear

2006

Firstpage

2644

Lastpage

2646

Abstract

In this letter, we report on the fabrication and characterization of InAs-InP (100) quantum-dot (QD) Fabry-Perot and ring lasers, lasing in the 1.55-mum wavelength range and employing narrow deeply etched ridge waveguides (1.65 mum width). The performance of the lasers appears not affected by sidewall recombination effects of the deeply etched waveguide structure. Narrow deeply etched ridge waveguides can be mono-mode and allow for a small bending radius to realize compact integrated devices. As a demonstration, we present results on a compact ring laser with a free spectral range close to 40 GHz. Due to the low absorption of the QDs, unpumped output waveguides can be used

Keywords

Etching; Optical amplifiers; Optical waveguides; Quantum dot lasers; Quantum dots; Ring lasers; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission; Waveguide lasers; Integrated optics; quantum dots (QDs); ring lasers; semiconductor lasers; waveguide bends;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.887382

Filename

4026602