Title :
A 12 × 12 In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode array
Author :
Zheng, X.G. ; Hsu, J.S. ; Sun, X. ; Hurst, J.B. ; Li, X. ; Wang, S. ; Holmes, Archie L. ; Campbell, Joe C. ; Huntington, Andrew S. ; Coldren, Larry A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fDate :
11/1/2002 12:00:00 AM
Abstract :
We report a 12 × 12 In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode (APD) array. The mean breakdown voltage of the APD was 57.9 V and the standard deviation was less than 0.1 V. The mean dark current was ∼2 and ∼300 nA, and the standard deviation was ∼0.19 and ∼60 nA at unity gain (Vbias = 13.5 V) and at 90% of the breakdown voltage, respectively. External quantum efficiency was above 40% in the wavelength range from 1.0 to 1.6 μm. It was ∼57% and ∼45% at 1.3 and 1.55 μm, respectively. A bandwidth of 13 GHz was achieved at low gain.
Keywords :
III-V semiconductors; avalanche photodiodes; dark conductivity; gallium arsenide; indium compounds; optical arrays; 0.1 V; 1.0 to 1.6 micron; 1.3 micron; 1.55 micron; 13 GHz; 13.5 V; 2 nA; 300 nA; 40 percent; 45 percent; 57 percent; In0.53Ga0.47As-In0.52Al0.48As; In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode array; bandwidth; breakdown voltage; external quantum efficiency; low gain; mean breakdown voltage; mean dark current; standard deviation; unity gain; wavelength range; Avalanche photodiodes; Bandwidth; Dark current; Infrared detectors; Molecular beam epitaxial growth; Optical arrays; Optical sensors; Positron emission tomography; Substrates; Sun;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2002.804297
